?2009 ixys all rights reserved 1 - 4 20090209c ixkh 35n60c5 ixys reserves the right to change limits, test conditions and dimensions. symbol conditions characteristic values (t vj = 25 c, unless otherwise speci ed) min. typ. max. r dson v gs = 10 v; i d = 18 a 90 100 m v gs(th) v ds = v gs ; i d = 1.2 ma 2.5 3 3.5 v i dss v ds = 600 v; v gs = 0 v t vj = 25? t vj = 125? 50 5 a ? i gss v gs = 20 v; v ds = 0 v 100 na c iss c oss v gs = 0 v; v ds = 100 v f = 1 mhz 2800 130 pf pf q g q gs q gd v gs = 0 to 10 v; v ds = 400 v; i d = 18 a 60 14 20 80 nc nc nc t d(on) t r t d(off) t f v gs = 10 v; v ds = 400 v i d = 18 a; r g = 3.3 10 5 60 5 ns ns ns ns r thjc 0.35 k/w i d25 = 35 a v dss = 600 v r ds(on) max = 0.1 coolmos ? * power mosfet features ?fast coolmos * power mosfet 4 th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (uis) - low thermal resistance due to reduced chip thickness ?enhanced total power density applications ?switched mode power supplies (smps) ?uninterruptible power supplies (ups) ?power factor correction (pfc) ?welding ?inductive heating ?pdp and lcd adapter mosfet symbol conditions maximum ratings v dss t vj = 25? 600 v v gs 20 v i d25 i d90 t c = 25? t c = 90? 35 25 a a e as e ar single pulse repetitive 800 1.2 mj mj dv/dt mosfet dv/dt ruggedness v ds = 0...480 v 5 0 v/ns d g s n-channel enhancement mode low r dson , high v dss mosfet ultra low gate charge to-247 ad g d s i d = 11 a; t c = 25? *coolmos is a trademark of in neon technologies ag. q d(tab)
?2009 ixys all rights reserved 2 - 4 20090209c ixkh 35n60c5 ixys reserves the right to change limits, test conditions and dimensions. source-drain diode symbol conditions characteristic values (t vj = 25?, unless otherwise speci ed) min. typ. max. i s v gs = 0 v 18 a v sd i f = 18 a; v gs = 0 v 0.9 1.2 v t rr q rm i rm i f = 18 a; -di f /dt = 100 a/?; v r = 400 v 450 12 70 ns ? a component symbol conditions maximum ratings t vj t stg operating -55...+150 -55...+150 ? ? m d mounting torque 0.8 ... 1.2 nm symbol conditions characteristic values min. typ. max. r thch with heatsink compound 0.25 k/w weight 6g
?2009 ixys all rights reserved 3 - 4 20090209c ixkh 35n60c5 ixys reserves the right to change limits, test conditions and dimensions. fig. 1 power dissipation fig. 2 typ. output characteristics fig. 3 typ. output characteristics 0 40 80 120 160 0 100 200 300 400 t c [ c] p tot [ w] symbol inches millimeters min max min max a 0.185 0.209 4.70 5.30 a1 0.087 0.102 2.21 2.59 a2 0.059 0.098 1.50 2.49 d 0.819 0.845 20.79 21.45 e 0.610 0.640 15.48 16.24 e2 0.170 0.216 4.31 5.48 e0.215bsc5.46bsc l 0.780 0.800 19.80 20.30 l1 - 0.177 - 4.49 ?p 0.140 0.144 3.55 3.65 q 0.212 0.244 5.38 6.19 s0.242bsc6.14bsc b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 d1 0.515 - 13.07 - d2 0.020 0.053 0.51 1.35 e1 0.530 - 13.45 - ?p1 - 0.291 - 7.39 to-247 ad outline 4.5 v 5v 5.5 v 6v 7v 8v 10 v 20 v 0 10 20 30 40 50 0 5 10 15 20 v ds [v] i d ] a [ 4.5 v 5v 5.5 v 6v 7v 8v 10 v 20 v 0 15 30 45 60 75 90 105 120 05101520 v ds [v] i d ] a [ t j = 25c v gs = v gs = t j = 150c
?2009 ixys all rights reserved 4 - 4 20090209c ixkh 35n60c5 ixys reserves the right to change limits, test conditions and dimensions. single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 -6 10 0 10 -1 10 -2 10 -3 t p [s] z c j h t ] w / k [ 540 580 620 660 700 -60 -20 20 60 100 140 180 t j [c] v ) s s d ( r b ] v [ 0 250 500 750 1000 20 60 100 140 180 t j [c] e s a ] j m [ ciss coss crss 10 5 10 4 10 3 10 2 10 1 10 0 050100150200 v ds [v] c] f p [ 12 0v 40 0v 0 2 4 6 8 10 12 0 102030405060 q gate [nc] v s g ] v [ 25 c 150 c 25 c, 98% 150 c, 98% 10 2 10 1 10 0 10 -1 00.511.52 v sd [v] i f ] a [ 25 c 150 c 0 40 80 120 160 02 4 6 810 v gs [v] i d ] a [ typ 98 % 0 0.05 0.1 0.15 0.2 0.25 0.3 -60 -20 20 60 100 140 180 t j [c] r ) n o ( s d [ ] 5v 5.5 v 6v 6.5 v 7v 20 v 0 0.1 0.2 0.3 0.4 0.5 01020304050 i d [a] r ) n o ( s d [ ] v ds = t jv = 150c i d = 18 a v gs = 10 v v ds > 2 r ds(on) max i d t j = t j = v ds = 120 v v gs = 0 v f = 1 mhz i d = 11 a i d = 0.25 ma d = t p /t i d = 18 a pulsed fig. 5 drain-source on-state resistance fig. 4 typ. drain-source on-state resistance characteristics of igbt fig. 7 forward characteristic of reverse diode fig. 8 typ. gate charge fig. 10 avalanche energy fig. 11 drain-source breakdown voltage fig. 6 typ. transfer characteristics fig. 9 typ. capacitances fig. 12 max. transient thermal impedance
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